型号 IPB90N06S4-04
厂商 Infineon Technologies
描述 MOSFET N-CH 60V 90A TO263-3
IPB90N06S4-04 PDF
代理商 IPB90N06S4-04
标准包装 1,000
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 3.7 毫欧 @ 90A,10V
Id 时的 Vgs(th)(最大) 4V @ 90µA
闸电荷(Qg) @ Vgs 128nC @ 10V
输入电容 (Ciss) @ Vds 10400pF @ 25V
功率 - 最大 150W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 带卷 (TR)
其它名称 SP000379632
同类型PDF
IPB90N06S4L-04 Infineon Technologies MOSFET N-CH 60V 90A TO263-3
IPBD-02-D Samtec Inc CONN HOUSING RCP 4 POS 4.19MM ST
IPBD-02-S Samtec Inc POWER CABLE HOUSING 2POS
IPBD-02-S-M Samtec Inc POWER CABLE HOUSING 2POS
IPBD-03-S Samtec Inc CONN HOUSING RCP 3 POS 4.19MM
IPBD-04-D Samtec Inc CONN HOUSING RCP 8 POS 4.19MM
IPBD-05-D-M Samtec Inc POWER CABLE HOUSING 10POS
IPBD-05-S-M Samtec Inc POWER CABLE HOUSING 5POS
IPBD-07-D Samtec Inc POWER CABLE HOUSING 14POS
IPBD-08-S Samtec Inc POWER CABLE HOUSING 8POS
IPBD-10-S Samtec Inc CONN RECPT HOUSING 10POS .165"
IPBH6N03LA Infineon Technologies MOSFET N-CH 25V 50A D2PAK
IPBH6N03LA G Infineon Technologies MOSFET N-CH 25V 50A TO-263
IPBH6N03LA G Infineon Technologies MOSFET N-CH 25V 50A TO-263
IPBH6N03LA G Infineon Technologies MOSFET N-CH 25V 50A TO-263
IPBS-102-01-T-D Samtec Inc PWR MATE TERM STRIP HDR 4POS
IPBS-105-01-T-D-GP Samtec Inc PWR MATE TERM STRIP HDR 10POS
IPBT-102-H1-T-D Samtec Inc PWR MATE TERM STRIP HDR 4POS
IPBT-102-H1-T-D-RA Samtec Inc PWR MATE TERM STRIP HDR 4POS
IPBT-102-H1-T-S Samtec Inc PWR MATE TERM STRIP HDR 2POS